| PART |
Description |
Maker |
| EDX5116ACSE-4C-E EDX5116ACSE-3A-E EDX5116ACSE-3B-E |
512M bits XDR DRAM
512M bits XDR?/a> DRAM
|
Elpida Memory
|
| EDL5132CBMA-10-E |
512M bits Mobile RAM MCP 2 pcs of 256Mb components (16M words x 32 bits)
|
Elpida Memory, Inc.
|
| EDD2508AKTA-5B-E EDD2508AKTA-5C-E EDD2508AKTA-5-E |
256M bits DDR SDRAM (32M words x 8 bits, DDR400)
|
Elpida Memory, Inc.
|
| EDD51163DBH-5BLS-F EDD51163DBH-6ELS-F EDD51163DBH- |
32M X 16 DDR DRAM, 5 ns, PBGA60
512M bits DDR Mobile RAM?/a> WTR (Wide Temperature Range), Low Power Function
512M bits DDR Mobile RAM垄芒 WTR (Wide Temperature Range), Low Power Function
|
ELPIDA MEMORY INC
|
| LC382161T-17 |
2 MEG(65536 words x 16 bits x 2 banks) Synchronous DRAM
|
Sanyo Semicon Device
|
| IS42S32800B-7T IS42S32800B-6T IS42S32800B-6BI IS42 |
2M Words x 32 Bits x 4 Banks (256-MBIT) SYNCHRONOUS DYNAMIC RAM 8M X 32 SYNCHRONOUS DRAM, 5.5 ns, PBGA90
2M Words x 32 Bits x 4 Banks (256-MBIT) SYNCHRONOUS DYNAMIC RAM 8M X 32 SYNCHRONOUS DRAM, 5.5 ns, PDSO86
|
Integrated Silicon Solution, Inc.
|
| EDS2532CABH-1A-E EDS2532CABH-75-E EDS2532CABH-1AL- |
GT 25C 25#12 PIN PLUG 8M X 32 SYNCHRONOUS DRAM, 6 ns, PBGA90
256M bits SDRAM (8M words x 32 bits)
GT 5C 3#4 2#16 PIN PLUG
GT 3C 3#0 SKT PLUG
|
http://
Elpida Memory, Inc.
|
| LC322271J LC322271T-80 |
2 MEG (131072 words X 16 bits) DRAM Fast Page Mode, Byte Write 2迈可31072字16位），内存快速页面模式，字节
|
Sanyo Electric Co.,Ltd.
Sanyo Electric Co., Ltd.
|
| EDE2516ABSE-GE-E EDE2508ABSE-GE-E ELPIDAMEMORYINC. |
256M bits DDR2 SDRAM for HYPER DIMM 32M X 8 DDR DRAM, 0.4 ns, PBGA60
|
Elpida Memory, Inc.
|
| EBD11ED8ADFB-7B EBD11ED8ADFB EBD11ED8ADFB-6B EBD11 |
1GB Unbuffered DDR SDRAM DIMM (128M words x72 bits, 2 Ranks) 1GB的无缓冲DDR SDRAM的内存（128M的话x72位，2个等级）
1GB Unbuffered DDR SDRAM DIMM (128M words x72 bits, 2 Ranks) 128M X 72 DDR DRAM MODULE, 0.75 ns, DMA184
|
Elpida Memory, Inc.
ELPIDA[Elpida Memory]
|
